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Published 13 Nov 2024

Dual growth chamber Molecular Beam Epitaxy System

UNIVERSITY OF SHEFFIELD · Yorkshire and the Humber

Key facts

Estimated value
£6,000,000
Contract starts
04 Mar 2025
Contract ends
30 Apr 2025
Procedure
Open procedure (above threshold)
Buyer type
Education

Description

The EPSRC National Epitaxy Facility (NEF) based at the University of Sheffield has been providing bespoke semiconductor wafers to academia and industry for 45 years. It is a unique world-class centre combining technical excellence and expertise with state-of-the-art epitaxy and material characterization equipment. We are looking to further enhance our capability provision to the UK semiconductor community, by investing in a new linked dual-chamber Molecular Beam Epitaxy (MBE) System for arsenides/phosphides and arsenides/antimonides growth that is fully automated, capable of 24/7 operation, reliable, and resource-efficient allowing further expansion in the future.

NEF currently supplies epitaxy wafers to over 200 users across 28 UK Universities and industry to support UKRI grants worth over £150M. Our performance is governed by Key Performance Indicators agreed with the EPSRC and include reactor downtime. Therefore, reliability of the system is a key factor, and exemplary after sales service, equipment monitoring tools, and back-up systems are essential.

The System must comprise of: 1. Two vacuum-linked growth chambers with high capacity sources and high speed pumping arrangements suitable for the production of arsenide/phosphide and arsenide/antimonide materials of the highest purity 2. Dedicated sample preparation chamber for cleaning and oxide desorption using gas sources 3. A separate outgassing and surface analysis chamber with an Auger Electron Spectroscopy tool 4. Two sample entry locks, and two storage chambers 5. Robust automated transfer system connecting entry locks, surface preparation and analysis chambers, storage chambers, and growth chambers with space for further expansion. 6. Reliable automation and control software that allows for the two growth chambers to be operated independently. 7. Low temperature (down to cryogenic) metals deposition capability (either within one of the two arsenide growth chambers or separate), and should ideally fit in a 7.2m by 4.5m footprint (excluding peripheral equipment, such as electrical racks, cryopumps and compressors, PCs, etc.).

It would be advantageous for the System to have the following additional capabilities: a. integrated vacuum suitcase technology compatible with other UK facilities to allow transport of samples under vacuum in and out of the system b. integrated solutions allowing maintenance of critical components without breaking chamber vacuum c. real-time data management suitable for machine learning and auto-correction of growth conditions.

We will be looking for a System with:

i. resource-efficient equipment, such as low liquid nitrogen consumption ii. exemplary after-sales service iii. advanced equipment monitoring and notification systems, such as power/water/vacuum loss robust back-up systems for essential supplies, such as power/water.

Additional information: Market Engagement: We welcome site visits or virtual meetings from potential suppliers to discuss the System requirements during the period 18th November - 6th December 2024. Meetings and site visits must be arranged no later than 29th November. Subject to successful funding of the System, we expect the tender to be published in January 2025.

Format: individual meetings, either on-site or virtual.

Contact to arrange meetings: Dr Zofia Bishop by email: [email protected]

Address for site visits: Centre for Nanoscience and Technology, Broad Lane, Sheffield, S3 7HQ.

Please note that the dates shown above in Section 1, are purely indicative at this stage & are very likely to change when we have confirmation of the funding situation

Categories (CPV)

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